Journal
IEEE TRANSACTIONS ON POWER ELECTRONICS
Volume 36, Issue 2, Pages 1269-1273Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2020.3008226
Keywords
Gallium nitride; Integrated circuits; Silicon carbide; Silicon; Schottky diodes; Performance evaluation; Loss measurement; Diode multiplier; gallium nitride (GaN); GaN-on-Si; GaN diode; Tri-Anode; power integrated circuit (IC)
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Funding
- European Research Council under the European Union's H2020 Program/ERC [679425]
- Swiss Office of Energy [SI501568-01]
- Swiss National Science Foundation [PYAPP2_166901]
- European Research Council (ERC) [679425] Funding Source: European Research Council (ERC)
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This article introduces the performance and potential of gallium nitride diodes, demonstrating the advantages of the gallium nitride-on-silicon structure and its application in power integrated circuits. By developing a new type of SBD, the pathway is paved for efficient and compact power converters.
Gallium nitride (GaN) transistors are being employed in an increasing number of applications thanks to their excellent performance and competitive price. Yet, GaN diodes are not commercially available, and little is known about their performance and potential impact on power circuit design. In this article, we demonstrate scaled-up GaN-on-Si Tri-Anode Schottky barrier diodes (SBDs), whose excellent dc and switching performance are compared to commercial Si fast-recovery diodes and SiC SBDs. Moreover, the advantageous lateral GaN-on-Si architecture enables the integration of several devices on the same chip, paving the way for power integrated circuits (ICs). This is demonstrated by realizing a diode-multiplier IC, which includes up to eight monolithically integrated SBDs on the same chip. The IC was integrated on a dc-dc magnetic-less boost converter able to operate at a frequency of 1 MHz. The IC performance and footprint are compared to the same circuit realized with discrete Si and SiC vertical devices, showing the potential of GaN power ICs for efficient and compact power converters.
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