4.8 Article

A Wireless Power Method for Deeply Implanted Biomedical Devices via Capacitively Coupled Conductive Power Transfer

Journal

IEEE TRANSACTIONS ON POWER ELECTRONICS
Volume 36, Issue 2, Pages 1870-1882

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2020.3009048

Keywords

Electrodes; Integrated circuit modeling; Couplings; Implants; Analytical models; Impedance; Impedance measurement; Biomedical transducers; capacitive transducers; low-power electronics; wireless power transmission

Funding

  1. Ministry of Business Innovation and Employment (MBIE) Program Grant, New Zealand - Hugo Charitable Fund

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This article presents a capacitively coupled conductive power transfer method for deeply implanted biomedical devices, which ensures safe power transfer into the body with minimal implant volume. The proposed method has been validated through experimental measurements, demonstrating its effectiveness and safety.
Deeply implanted biomedical devices (DIBDs) are a challenging application of wireless power transfer because of the requirement for miniaturization while minimizing patient exposure to tissue heating. This article proposes a capacitively coupled conductive power transfer method for DIBDs, which allows for the safe transfer of power into the body while using minimum implant volume. The method uses parallel insulated capacitive electrodes to couple uniform current flow into the tissue and implants. Analytical analyses are presented, which result in a two-port network that describes circuit operation. The two-port network is further simplified for typical DIBD applications where coupling to the external electrodes is low. This results in a simple circuit model of power transfer for which the parameters are easily obtained by experimental measurements. The proposed circuit model has been validated using circuit coupled finite-element analysis (COMSOL) and benchtop experiments using a tissue phantom. In addition, the safety aspect of the method has been evaluated via COMSOL simulation of the specific absorption rate for various implanted receiver dimensions and implantation depths. Finally, a completed power supply, unaffected by the implantation depth, running at 6.78 MHz, delivering 10 mW deep into the body while meeting the IEEE C95.1 basic restriction is presented.

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