Related references
Note: Only part of the references are listed.Achieving High Mobility and Excellent Stability in Amorphous In-Ga-Zn-Sn-O Thin-Film Transistors
Il Man Choi et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Low Subthreshold Swing and High Mobility Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity
Subhranu Samanta et al.
IEEE ELECTRON DEVICE LETTERS (2020)
Significant Performance Enhancement of Very Thin InGaZnO Thin-Film Transistors by a Self-Assembled Monolayer Treatment
Wensi Cai et al.
ACS APPLIED ELECTRONIC MATERIALS (2020)
Nanometre-thin indium tin oxide for advanced high-performance electronics
Shengman Li et al.
NATURE MATERIALS (2019)
Amorphous IGZO TFT with High Mobility of ∼70 cm2/(V s) via Vertical Dimension Control Using PEALD
Jiazhen Sheng et al.
ACS APPLIED MATERIALS & INTERFACES (2019)
Impact of cation compositions on the performance of thin-film transistors with amorphous indium gallium zinc oxide grown through atomic layer deposition
Min Hoe Cho et al.
JOURNAL OF INFORMATION DISPLAY (2019)
Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer
Dun-Bao Ruan et al.
RSC ADVANCES (2018)
Investigations on the bias temperature stabilities of oxide thin film transistors using In-Ga-Zn-O channels prepared by atomic layer deposition
So-Jung Yoon et al.
RSC ADVANCES (2018)
Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate
Dian Lei et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
The development of flexible integrated circuits based on thin-film transistors
Kris Myny
NATURE ELECTRONICS (2018)
Dynamic Logic Circuits Using a-IGZO TFTs
Jong-Seok Kim et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)
Reduction of Bias and Light Instability of Mixed Oxide Thin-Film Transistors
Mallory Mativenga et al.
APPLIED SCIENCES-BASEL (2017)
The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer
Yeonwoo Shin et al.
SCIENTIFIC REPORTS (2017)
Performance and Stability Enhancement of In-Sn-Zn-O TFTs Using SiO2 Gate Dielectrics Grown by Low Temperature Atomic Layer Deposition
Jiazhen Sheng et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
Amorphous IGZO Thin-Film Transistors With Ultrathin Channel Layers
Tsung-Han Chiang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
2D Semiconductor FETs-Projections and Design for Sub-10 nm VLSI
Wei Cao et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Direct Light Pattern Integration of Low-Temperature Solution-Processed All-Oxide Flexible Electronics
You Seung Rim et al.
ACS NANO (2014)
Effect of channel thickness on electrical performance of amorphous IGZO thin-film transistor with atomic layer deposited alumina oxide dielectric
Y. Li et al.
CURRENT APPLIED PHYSICS (2014)
Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
E. Fortunato et al.
ADVANCED MATERIALS (2012)
Performance of 5-nm a-IGZO TFTs With Various Channel Lengths and an Etch Stopper Manufactured by Back UV Exposure
Mallory Mativenga et al.
IEEE ELECTRON DEVICE LETTERS (2012)
Time-temperature dependence of positive gate bias stress and recovery in amorphous indium-gallium-zinc-oxide thin-film-transistors
Md Delwar Hossain Chowdhury et al.
APPLIED PHYSICS LETTERS (2011)
Material characteristics and applications of transparent amorphous oxide semiconductors
Toshio Kamiya et al.
NPG ASIA MATERIALS (2010)
Short channel characteristics of Gallium-Indium-Zinc-Oxide thin film transistors for three-dimensional stacking memory
Ihun Song et al.
IEEE ELECTRON DEVICE LETTERS (2008)
High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel
Jae Kyeong Jeong et al.
APPLIED PHYSICS LETTERS (2007)
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
K Nomura et al.
NATURE (2004)
Share Paper
