Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 68, Issue 2, Pages 550-555Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.3041568
Keywords
Logic gates; Degradation; Stress; Temperature; Temperature measurement; Thin film transistors; Silicon; Degradation; positive bias stress (PBS); recovery; thin-film transistor (TFT); threshold voltage
Funding
- National Natural Science Foundation of China [61971299, 61974101]
- State Key Laboratory of ASIC and System, Fudan University [2019KF007]
- Suzhou Science and Technology Bureau [SYG201933]
- Natural Science Foundation of Jiangsu Province of China [SBK20201201]
- Natural Science Foundation through the Jiangsu Higher Education Institute of China [19KJB510058]
Ask authors/readers for more resources
Research has shown that under positive bias stress (PBS), the transfer characteristic curve of polycrystalline silicon thin-film transistors (TFTs) shifts towards the negative gate bias direction, with a recoverable degradation process that initially proceeds at a fast rate before slowing down. Further acceleration of recovery can be achieved at higher temperatures or by applying a negative gate bias. The proposed degradation mechanism involves the generation of protons in the gate oxide and their accumulation at the channel/gate oxide interface.
Different from the conventional degradation phenomenon under positive bias stress (PBS), the shift of the transfer characteristic curve of polycrystalline silicon thin-film transistors (TFTs) to the negative gate bias direction after PBS is observed and reported. The PBS degradation is found to be recoverable and the recovery proceeds at a faster rate first and then continues at a much slower rate. The recovery can be further accelerated at a higher temperature or by applying a negative gate bias. After detailed data analysis, the degradation mechanism is proposed to be the generation of protons in the gate oxide and its accumulation at the channel/gate oxide interface. The proposed degradation model could explain both the degradation phenomena and the recovery behaviors of PBS degradation.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available