Tutorial: Design of High-Speed Nano-Scale CMOS Mixed-Voltage Digital I/O Buffer With High Reliability to PVTL Variations

Ever since the reliability issues caused by I/O (input/output) compatibility among chips fabricated using different processes were raised during mid-2000, on-silicon mixed-voltage I/O buffer with wide voltage tolerance has been considered a better solution than using signal level converters to shrink PCB size, number of discretes, and power consumption. However, various external voltages on I/O pad result in body effect, leakage, hot-carrier degradation, and gate-oxide overstress in stacked transistors of mixed-voltage I/O. What even worse is that slew rate (SR) was also found deteriorated by PVT (Process, Voltage, Temperature) variations. A complete mixed-voltage I/O buffer design flow using nano-scale CMOS processes will be introduced in this tutorial based on previously developed buffers. Besides circuit design methodology, the reliability design consideration for the buffers, including ESD, PVT detection, and slew rate auto-adjustment will be discussed as well.

Automated summary

This tutorial introduces a complete mixed-voltage I/O buffer design flow using nano-scale CMOS processes to address reliability issues caused by I/O compatibility among chips fabricated using different processes, and discusses various design considerations for the buffers.