Investigation of Low-Frequency Noise Characteristics in Gated Schottky Diodes

In this work, the low-frequency noise (LFN) characteristics of the 3-terminal n-type gated Schottky diode (GSD) were investigated. The GSD shows the 1/f noise behavior, and the noise origin depends on the operating current (I-D) of the GSD. The 1/f noise is mainly generated by the barrier height fluctuation near the metal-semiconductor interface at the reverse Schottky diode (SD) in the low I-D region, and by the carrier number fluctuation (CNF) at the n-type FET in the high I-D region. The LFN characteristics in the low I-D region are strongly affected by the temperature. With increasing temperature, the transition of the 1/f noise origin from the reverse SD to the n-type FET occurs at lower I-D.

Automated summary

In this study, the low-frequency noise characteristics of the 3-terminal n-type gated Schottky diode were investigated, with findings that the noise origin varies depending on the operating current and that the noise characteristics in the low operating current region are strongly affected by temperature. The GSD exhibits 1/f noise behavior generated by different noise sources in different current conditions.