Related references
Note: Only part of the references are listed.Low-power linear computation using nonlinear ferroelectric tunnel junction memristors
Radu Berdan et al.
NATURE ELECTRONICS (2020)
Optimized annealing conditions to enhance stability of polarization in sputtered HfZrOx layers for non-volatile memory applications
Yeriaron Kim et al.
CURRENT APPLIED PHYSICS (2020)
Freestanding Oxide Ferroelectric Tunnel Junction Memories Transferred onto Silicon
Di Lu et al.
NANO LETTERS (2019)
Energy-Efficient Organic Ferroelectric Tunnel Junction Memristors for Neuromorphic Computing
Sayani Majumdar et al.
ADVANCED ELECTRONIC MATERIALS (2019)
Ferroelectric Tunneling Junctions Based on Aluminum Oxide/Zirconium-Doped Hafnium Oxide for Neuromorphic Computing
Hojoon Ryu et al.
SCIENTIFIC REPORTS (2019)
A comprehensive study on the mechanism of ferroelectric phase formation in hafnia-zirconia nanolaminates and superlattices
Min Hyuk Park et al.
APPLIED PHYSICS REVIEWS (2019)
Direct Correlation of Ferroelectric Properties and Memory Characteristics in Ferroelectric Tunnel Junctions
Benjamin Max et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2019)
Retention Characteristics of Hf0.5Zr0.5O2-based Ferroelectric Tunnel Junctions
Benjamin Max et al.
2019 IEEE 11TH INTERNATIONAL MEMORY WORKSHOP (IMW 2019) (2019)
A Complementary Metal Oxide Semiconductor Process-Compatible Ferroelectric Tunnel Junction
Fabian Ambriz-Vargas et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
Ferroelectric tunnel junctions for information storage and processing
Vincent Garcia et al.
NATURE COMMUNICATIONS (2014)
ac dynamics of ferroelectric domains from an investigation of the frequency dependence of hysteresis loops
S. M. Yang et al.
PHYSICAL REVIEW B (2010)
Switching dynamics in ferroelectric thin films: An experimental survey
DJ Jung et al.
INTEGRATED FERROELECTRICS (2002)