Journal
IEEE ELECTRON DEVICE LETTERS
Volume 42, Issue 3, Pages 323-326Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2021.3052306
Keywords
Switches; Tunneling; Electrodes; Junctions; Pulse measurements; Iron; Creep; Ferroelectric tunnel junction (FTJ); ferroelectric devices; scaling effects; defect-induced polarization switching
Categories
Funding
- Brain Korea 21 Plus Project in 2020
- Future Semiconductor Device Technology Development Program - Ministry of Trade, Industry and Energy (MOTIE)
- Korea Semiconductor Research Consortium (KSRC) [10067739, 20010847]
- National Research Foundation (NRF) - Korean Ministry of Science and ICT [2020M3F3A2A01081670, 2020M3F3A2A01081666]
- Synopsys Inc.
- Korea Evaluation Institute of Industrial Technology (KEIT) [10067739] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2020M3F3A2A01081670] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The scaling effects on FTJ memory reveal changes in the polarization switching mechanism, with domain wall spreading limited switching becoming dominant due to process-induced damaged edge regions, leading to larger remanent polarization and faster switching speed.
The scaling effects of ferroelectric tunnel junction (FTJ) memory are investigated by evaluating remanent polarization (P-r), coercive field (E-c), and polarization switching speed. Through the analysis on dc tunneling currents and frequency responses of E-c and P-r for FTJs with various sizes, it is found that polarization switching mechanism (domain nucleation limit) is not changed by the width reduction. However, by the length scaling, domain wall spreading-limited switching becomes dominant by process-induced damaged edge regions, leading to the larger P-r and the faster switching speed.
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