Journal
IEEE ELECTRON DEVICE LETTERS
Volume 42, Issue 3, Pages 355-358Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2021.3052911
Keywords
Thin film transistors; Logic gates; Zinc; Capacitance; Nickel; Voltage measurement; Glass; Negative capacitance; magnesium zinc oxide; thin film transistor; subthreshold swing
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Funding
- U.S. Department of Energy, Office of Basic Energy Sciences [DE-SC0012704]
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A negative capacitance thin-film transistor (NC-TFT) was fabricated on a glass substrate using MgZnO, with a Mg0.03Zn0.97O semiconductor layer as the channel and Ni0.02Mg0.15Zn0.83O as the ferroelectric layer. The NC-TFT showed significantly reduced subthreshold swing and a high on/off ratio of drain current.
We demonstrate the negative capacitance thin-film transistor (NC-TFT) on glass substrate using the multifunctional MgZnO (MZO). The Mg0.03Zn0.97O semiconductor layer acts as the TFT channel for stable operation while the Ni-doped MZO, i.e. Ni0.02Mg0.15Zn0.83O (NMZO) serves as the ferroelectric layer in the NMZO/SiO2 stacking gate dielectric structure. The subthreshold swing (SS) value is significantly reduced over the reference TFT without ferroelectric layer. The minimum SS value of the NC-TFT reaches 52 mV/dec while the on/off ratio of drain current I-D reaches 10(9).
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