High Current Nb-Doped P-Channel MoS2 Field-Effect Transistor Using Pt Contact

This letter demonstrates unipolar p-type MoS2 field-effect transistors (p-FETs). The p-FETs are fabricated using high work function Pt as the contact electrode and p-type MoS (2) film as the active channel. The p-FETs, with a channel length of 1-mu m, show an output current of -10 mu A/mu m with a drain voltage of -1 V. The Pt electrode, formed by slow electron-beam evaporation, shows a contact barrier height of 0.13 eV. In comparison, a faster deposition rate results in a larger resistance and a higher contact barrier of the Pt electrode. Raman characterization provides certain support for the improved contact interface of the slowly deposited Pt electrode, which may be an essential factor in improving current drive.

Automated summary

This research demonstrates the use of unipolar p-type MoS2 field-effect transistors (p-FETs) to improve current drive, with a particular focus on the Pt electrode fabrication method and the performance of the contact interface.