Journal
IEEE ELECTRON DEVICE LETTERS
Volume 42, Issue 3, Pages 347-350Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2021.3055940
Keywords
Thin film transistors; Iron; Logic gates; Crystals; Substrates; Lattices; Crystallization; Crystallization; indium gallium tin oxide; high mobility; reliability; thin-film transistors
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Funding
- Samsung Display Company
- National Research Foundation (NRF) through the Korean Government [NRF-2020M3F3A2A01081240]
- National Research Foundation of Korea [4199990114252] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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This study reports the fabrication of high performance polycrystalline IGTO TFTs at a low temperature of 400 degrees C. The fabricated TFTs exhibited high mobility, low threshold voltage, low subthreshold gate swing, and a high I-ON/OFF ratio. The stable behavior against external gate bias stress was attributed to the high degree of metal-oxygen lattice ordering in the crystalline IGTO TFTs.
This letter reports the fabrication of high performance polycrystalline InGaSnO (IGTO) thin-film transistors (TFTs) at a low temperature of 400 degrees C. The microstructure of IGTO films was analyzed using X-ray diffraction and high-resolution transmission electron microscopy. The fabricated polycrystalline IGTO TFTs exhibited an unexpected high mobility of 116.5 cm(2)/Vs, threshold voltage of 0.47 V, low subthreshold gate swing of 134 mV/decade, and I-ON/OFF ratio of > 1 x 10(9). Moreover, the stable behavior against external gate bias stress was observed for crystalline IGTO TFTs, which was attributed to the high degree of metal-oxygen lattice ordering.
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