4.7 Article

Inner Strain Regulation in Perovskite Single Crystals through Fine-Tuned Halide Composition

Journal

CRYSTAL GROWTH & DESIGN
Volume 21, Issue 3, Pages 1741-1750

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.cgd.0c01631

Keywords

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Funding

  1. National Key Research and Development Program of China [2017YFA0204800]
  2. National Natural Science Foundation of China [91733301/51901190/62004121]
  3. DNL Cooperation Fund CAS [DNL180311]
  4. 111 Project [B14041]
  5. Changjiang Scholars and Innovative Research Team [IRT_14R33]
  6. China Postdoctoral Science Foundation [2020M673336]

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The study examines the impact of halide composition on lattice strain and optoelectronic properties by growing FAPbBr(x)I(3-x)SCs single crystals. It finds that increasing the Br/I ratio can regulate the lattice strain, leading to excellent phase stability and good photodetector performance. This work lays a foundation for designing high-quality devices based on composition-optimized FAPbBr(x)I(3-x)SCs with predictable optoelectronic properties.
Halide-composition engineering has been recognized as an effective means to stabilize formamidine (FA)-based perovskite (FAPbI(3)) in thin-film devices. However, the influence of a halide mixture on the lattice strain, trap density, carrier lifetime, and phase stability remains unclear. Herein, FAPbBr(x)I(3-x) SCs single crystals (SCs) are grown as a model to study how halide composition would affect the inner strain and the optoelectronic properties. It is found that by gradually increasing the Br/I ratio from 0:1 to 1:0, the inner strain can be regulated. X-ray diffraction results show excellent phase stability of FAPbBr(x)I(3-x)SCs (stable in an ambient atmosphere over 1.5 years when x >= 0.5) because of the released expansion stress in the cubic lattice. The relevant photodetector presents good performance with an on-off ratio exceeding 10(3), a dark current as low as 10(-10) A, a linear dynamic range (LDR) of 111 dB, detectivity of 4 x 10(11) Jones, and long-term photostability. The present work paves a path toward the design of high-quality devices based on composition-optimized FAPbBr(x)I(3-x)SCs with predictable optoelectronic properties.

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