4.7 Article

Importance of Overcoming MOVPE Surface Evolution Instabilities for >1.3 μm Metamorphic Lasers on GaAs

Journal

CRYSTAL GROWTH & DESIGN
Volume 21, Issue 4, Pages 2068-2075

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.cgd.0c01498

Keywords

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Funding

  1. Science Foundation Ireland [12/RC/2276, 12/RC/2276_P2, 15/IA/2864]
  2. Irish Research Council [EPSPG/2014/35]
  3. Irish Research Council (IRC) [EPSPG/2014/35] Funding Source: Irish Research Council (IRC)

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Researchers demonstrated a 1.3 μm band laser grown by MOVPE on a GaAs substrate with a specially engineered metamorphic parabolic-graded buffer to overcome surface epitaxial dynamics and instabilities. By using a combination of AlInGaAs and InGaP alloys for cladding layers, they achieved efficient compressively strained In0.4Ga0.6As quantum wells with low lasing threshold and high slope efficiency in the active layer.
We investigated and demonstrated a 1.3 mu m band laser grown by metalorganic vapor-phase epitaxy (MOVPE) on a specially engineered metamorphic parabolic-graded InxGa1-xAs buffer and epitaxial structure on a GaAs substrate. Bottom and upper cladding layers were built as a combination of AlInGaAs and InGaP alloys in a superlattice sequence. This was implemented to overcome (previously unreported) detrimental surface epitaxial dynamics and instabilities: when single alloys are utilized to achieve thick layers on metamorphic structures, surface instabilities induce defect generation. This has represented a historically limiting factor for metamorphic lasers by MOVPE. We describe a number of alternative strategies to achieve smooth surface morphology to obtain efficient compressively strained In0.4Ga0.6As quantum wells in the active layer. The resulting lasers exhibited low lasing threshold with a total slope efficiency of 0.34 W/A for a 500 mu m long-ridge waveguide device. The emission wavelength is extended as far as 1360 nm.

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