Journal
CHINESE PHYSICS B
Volume 30, Issue 8, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/abe22d
Keywords
phase-change memory; Sb2Te3; thin films; nanocomposites
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Funding
- National Key Research and Development Program of China [2017YFB0701703, 2017YFA0206101]
- National Natural Science Foundation of China [61874151]
- Science and Technology Council of Shanghai, China [19JC1416801, 19JC1416802]
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Doping Mo into SbTe improves its thermal stability, with Mo-doped Sb2Te3 (MST) showing better thermal stability and faster crystallization time in PCM applications. The endurance of up to 4 x 10^5 cycles and resistance ratio of more than one order of magnitude make MST a promising candidate for PCM applications.
Mo, as a dopant, is doped into SbTe to improve its thermal stability. It is shown in this paper that the Mo-doped Sb2Te3 (Mo0.26Sb2Te3, MST) material possesses phase change memory (PCM) applications. MST has better thermal stability than Sb2Te3(ST) and will crystallize only when the annealing temperature is higher than 250 degrees C. With the good thermal stability, MST-based PCM cells have a fast crystallization time of 6 ns. Furthermore, endurance up to 4 x 10(5) cycles with a resistance ratio of more than one order of magnitude makes MST a promising candidate for PCM applications.
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