4.8 Article

Molecular Nonvolatile Memory Based on [α-GeW12O40]4-/Metalloviologen Hybrids Can Work at High Temperature Monitored by Chromism

Journal

CHEMISTRY OF MATERIALS
Volume 33, Issue 6, Pages 2178-2186

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.chemmater.1c00090

Keywords

-

Funding

  1. National Natural Science Foundation of China [21771038]
  2. National Natural Science Foundation of Fujian Province [2018 J01684]
  3. Open Project Program of the State Key Laboratory of Photocatalysis on Energy and Environment [SKLPEE-202021, SKLPEE-202022]
  4. Fuzhou University

Ask authors/readers for more resources

The study introduces a new type of nonvolatile memory device that can operate stably in high-temperature environments and monitor the working temperature through color changes. Even at high temperatures, the framework remains intact, leading to better cycling stability.
The searching for new nonvolatile memories with the ability of working in harsh environments such as high temperature or humidity will be significant for industrial automation. Herein, a thermochromic polyoxometalate-based metal-organic framework (POMOF) constructed from Keggin-type polyoxometalates and metalloviologen has been fabricated as a nonvolatile memory device, which can exhibit stable nonvolatile memory behavior both at room and high temperature (150 degrees C) with stable cycle performance. Furthermore, its extreme working temperature can be monitored by color change from yellow to black, which stems from the reversible thermochromism of the POMOF. Importantly, the crystal structures at room and high temperature (150 degrees C) have been determined, which illustrates that the Keggin-type POM (alpha-GeW12O40)(4-) anions are anchored in the metalloviologen cationic [Co-2(bpdo)(4)(H2O)6](n)(4n+) cavities through numerous C-H center dot center dot center dot O-POM hydrogen bonds. The high temperature could not destroy its framework but remove its three lattice water molecules; in addition, more condensed structures with shorter Ge/W/Co-O lengths, stronger hydrogen bonds, and more distorted terminal bpdo ligands can be observed. Consequently, better cycling stability with a more uniform high-resistance state/ low-resistance state can be achieved. Finally, the charge transport mechanism in this POMOF-based device during the resistive switching process has been discussed. In all, the combination of electron-poor metalloviologen with electron reservoir POM can give rise to the enhanced nonvolatile memory and better thermal stability accompanied with observable chromism.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.8
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available