A more accurate calculation method of trap state distribution based on transient photo-voltage measurement

This article presents a more accurate method to extract the density of trap state (DOST) distribution from the experimental data of transient photo-voltage (TPV) measurement, by exploring the difficulties in the technique given by Wang et al. We give up the hypothesis of exponential type DOST distribution in their theory and introduce the Gauss type distribution to replace it. Incorporating the multiple-trapping model and zero-temperature approximation, we put forward a more accurate DOST distribution extraction method based on the TPV experimental result. Our theory predicts that the logarithm of carrier lifetime is a quadratic function of photo-voltage in the whole interval, which is consistent with the result given by TPV experiment.

Automated summary

This article presents a more accurate method to extract the density of trap state distribution, exploring the difficulties in existing techniques and making theoretical improvements. Results show a quadratic relationship between carrier lifetime and photo-voltage, indicating a more accurate method for DOST distribution extraction.