Vertically aligned InGaN nanowire arrays on pyramid textured Si (100): A 3D arrayed light trapping structure for photoelectrocatalytic water splitting

To boost photoelectrocatalytic water splitting, we synthesize InGaN nanowires (NWs) on pyramid textured Si (100) substrates (InGaN/PSi) by plasma-assisted molecular beam epitaxy which act as a novel anti-reflection 3D nano-grating light trapping structure. An InGaN/PSi photoanode exhibits 200% enhancement of the photocurrent compared to that of InGaN NWs on planar Si (InGaN/Si), which is mainly ascribed to the light trapping effects from pyramid-like NW arrays and the tilt structure of the NW arrays, number of InGaN NWs and better wettability. An ultra-low reflectivity around 1.5% due to the pyramid texture and tilt of the NWs implies enhanced absorption. Finite Difference Time Domain (FDTD) simulations verify the light trapping of the 3D nano grating structure. Furthermore, the inner n-InGaN/n-Si heterostructure fosters photocarrier separation, driving holes to the surface to enhance water oxidation. This research provides a vital approach, exploiting a novel 3D nano-grating light trapping structure to enhance photoelectrocatalytic water splitting by the combined effects of light management, heterostructure formation, doping, and maximizing surface wetting and surface area, which also has significance in other photoelectrocatalytic fields.

Automated summary

In this study, InGaN nanowires were synthesized on pyramid textured Si substrates to create a novel anti-reflection 3D nano-grating light trapping structure, leading to enhanced photoelectrocatalytic water splitting efficiency. The research was verified theoretically through Finite Difference Time Domain (FDTD) simulations.