Dislocation density reduction using overgrowth on hole arrays made in heteroepitaxial diamond substrates

The growth of large-area diamond films with low dislocation density is a landmark in the fabrication of diamond-based power electronic devices or high-energy particle detectors. Here, we report the development of a growth strategy based on the use of micrometric laser-pierced hole arrays to reduce dislocation densities in heteroepitaxial chemical vapor deposition diamond. We show that, under optimal growth conditions, this strategy leads to a reduction in dislocation density by two orders of magnitude to reach an average value of 6x10(5)cm(-2) in the region where lateral growth occurred, which is equivalent to that typically measured for commercial type Ib single crystal diamonds.

Automated summary

By employing a growth strategy based on micrometric laser-pierced hole arrays, the dislocation density in heteroepitaxial chemical vapor deposition diamond can be significantly reduced, reaching an average value equivalent to that typically measured for commercial type Ib single crystal diamonds.