Related references
Note: Only part of the references are listed.Do all screw dislocations cause leakage in GaN-based devices?
Jin Wang et al.
APPLIED PHYSICS LETTERS (2020)
Analysis of High-Temperature Carrier Transport Mechanisms for High Al-Content Al0.6Ga0.4N MSM Photodetectors
Yan Gu et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Quasi van der Waals epitaxy nitride materials and devices on two dimension materials
Dongdong Liang et al.
NANO ENERGY (2020)
Dynamics of surface electron trapping of a GaN-based transistors revealed by spatiotemporally resolved x-ray spectroscopy
Keiichi Omika et al.
APPLIED PHYSICS LETTERS (2020)
Control of optical polarization properties by manipulation of anisotropic strain in nonpolar m-plane GaInN/GaN quantum wells
Fedor Alexej Ketzer et al.
APPLIED PHYSICS LETTERS (2019)
GaN in different dimensionalities: Properties, synthesis, and applications
Yunxu Chen et al.
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2019)
Optimization of parameters for generating nitrogen plasma in plasma-assisted MOCVD growth of InGaN thin films
Pepen Arifin et al.
AIP ADVANCES (2019)
Reduction in crystalline quality anisotropy for non-polar a-plane GaN directly grown on titanium patterned sapphire substrate
Junhui Die et al.
APPLIED PHYSICS EXPRESS (2019)
Nanoporous distributed Bragg reflectors on free-standing nonpolar m-plane GaN
Saadat Mishkat-Ul-Masabih et al.
APPLIED PHYSICS LETTERS (2018)
Deep-ultraviolet light emission from 4H-AlN/4H-GaN short-period superlattice grown on 4H-SiC(11(2)over-bar0)
M. Kaneko et al.
APPLIED PHYSICS LETTERS (2018)
Defect-related anisotropic surface microstructures of nonpolar a-plane GaN epitaxial films
Xiaochan Li et al.
CRYSTENGCOMM (2018)
Optical anisotropy modulation in nonpolar a-plane AlGaN by manipulating the anisotropic in-plane strains through SiNx interlayers engineering
Yi Zhang et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2018)
Effect of stacking faults on the photoluminescence spectrum of zincblende GaN
S. A. Church et al.
JOURNAL OF APPLIED PHYSICS (2018)
High responsivity and low dark current nonpolar GaN-based ultraviolet photo-detectors
Wenliang Wang et al.
JOURNAL OF MATERIALS CHEMISTRY C (2018)
Fabrication of non-polar GaN based highly responsive and fast UV photodetector
Abhiram Gundimeda et al.
APPLIED PHYSICS LETTERS (2017)
Fast response ultraviolet photodetectors based on solution-processed ZnO nanocrystals
Zhang TongShuo et al.
SCIENCE CHINA-TECHNOLOGICAL SCIENCES (2015)
Enhanced UV detection by non-polar epitaxial GaN films
Shruti Mukundan et al.
AIP ADVANCES (2015)
The effects of substrate nitridation on the growth of nonpolar α-plane GaN on r-plane sapphire by metalorganic chemical vapor deposition
Jun Zhang et al.
APPLIED SURFACE SCIENCE (2014)
Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy
Shruti Mukundan et al.
JOURNAL OF APPLIED PHYSICS (2014)
Structural anisotropic properties of a-plane GaN epilayers grown on r-plane sapphire by molecular beam epitaxy
A. Lotsari et al.
JOURNAL OF APPLIED PHYSICS (2014)
Charged basal stacking fault scattering in nitride semiconductors
Aniruddha Konar et al.
APPLIED PHYSICS LETTERS (2011)
Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors
Dabing Li et al.
APPLIED PHYSICS LETTERS (2011)
The Spatial Distribution of Threading Dislocations in Gallium Nitride Films
Michelle A. Moram et al.
ADVANCED MATERIALS (2009)
Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation density
Shih-Chun Ling et al.
APPLIED PHYSICS LETTERS (2009)
On the origin of threading dislocations in GaN films
M. A. Moram et al.
JOURNAL OF APPLIED PHYSICS (2009)
Understanding x-ray diffraction of nonpolar gallium nitride films
M. A. Moram et al.
JOURNAL OF APPLIED PHYSICS (2009)
Characterization of defects in undoped non c-plane and high resistance GaN layers dominated by stacking faults
H. Witte et al.
PHYSICA B-CONDENSED MATTER (2009)
X-ray diffraction of III-nitrides
M. A. Moram et al.
REPORTS ON PROGRESS IN PHYSICS (2009)
Narrow-band photodetection based on M-plane GaN films
Sandip Ghosh et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2008)
Scanning Kelvin force microscopy imaging of surface potential variations near threading dislocations in GaN
JWP Hsu et al.
APPLIED PHYSICS LETTERS (2002)
Impact of the defects on the electrical and optical properties of AlGaN ultraviolet photodetectors
M Hanzaz et al.
JOURNAL OF APPLIED PHYSICS (2002)
Share Paper
