Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions

Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3K were demonstrated in epitaxial Fe/MgO/Fe(001) exchange-biased spin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions for each layer, combining sputter deposition for the Fe layers, electron-beam evaporation of the MgO barrier, and barrier interface tuning. Clear TMR oscillation as a function of the MgO thickness with a large peak-to-valley difference of similar to 80% was observed when the layers were grown on a highly (001)-oriented Cr buffer layer. Specific features of the observed MTJs are symmetric differential conductance (dI/dV) spectra for the bias polarity and plateau-like deep local minima in dI/dV (parallel configuration) at |V|=0.2-0.5 V. At 3K, fine structures with two dips emerge in the plateau-like dI/dV, reflecting highly coherent tunneling through the Fe/MgO/Fe. We also observed a 496% TMR ratio at RT by a 2.24nm-thick-CoFe insertion at the bottom-Fe/MgO interface.

Automated summary

Giant tunnel magnetoresistance (TMR) ratios were achieved in epitaxial Fe/MgO/Fe(001) exchange-biased spin-valve magnetic tunnel junctions by tuning growth conditions for each layer and growing on a highly (001)-oriented Cr buffer layer. Specific features include symmetric differential conductance spectra and plateau-like deep local minima in dI/dV.