Antiferromagnet-mediated spin-orbit torque induced magnetization switching in perpendicularly magnetized L1(0)-MnGa

Current-induced magnetization switching plays an essential role in spintronic devices exhibiting nonvolatility, high-speed processing, and low-power consumption. Here, we report on the spin-orbit torque-induced magnetization switching in perpendicularly magnetized L1(0)-MnGa/FeMn/Pt trilayers grown by molecular-beam epitaxy. An antiferromagnetic FeMn layer is inserted between the spin current generating Pt layer and spin absorbing MnGa layer. Due to the exchange bias effect, the trilayers show field-free spin-orbit torque switching. Overall, the spin transmission efficiency decreases monotonically as the FeMn thickness increases. It is found that the spin current can be transmitted through an 8nm-thick FeMn layer as evidenced by partial switching of the L1(0)-MnGa. The damping-like spin-orbit torque efficiency shows a peak value at t(FeMn) = 1.5nm due to the enhanced interfacial spin transparency and crystalline quality of the FeMn. These results help demonstrate the efficacy of emerging spintronic devices containing antiferromagnetic elements.

Automated summary

This study reports spin-orbit torque-induced magnetization switching in L1(0)-MnGa/FeMn/Pt trilayers, utilizing an antiferromagnetic FeMn layer to achieve field-free spin-orbit torque switching. The research found that the spin transmission efficiency decreases monotonically with increasing FeMn thickness, with a peak in the damping-like spin-orbit torque efficiency at 1.5nm FeMn thickness. These results demonstrate the effectiveness of emerging spintronic devices containing antiferromagnetic elements.