Journal
APPLIED PHYSICS LETTERS
Volume 118, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/5.0039088
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Funding
- Samsung Science & Technology Foundation [BA-1501-07, BA-1501-51]
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This study introduces a mechanism of spin-memory loss based on bulk spin-orbit coupling in a heavy metal, which can induce significant spin-flip at the interface through spin-orbital entanglement even with weak interfacial spin-orbit coupling. This mechanism highlights the crucial role of atomic orbital degree of freedom and results in strong spin-memory loss near band crossing points between bands of different orbital characters.
A spin current through a ferromagnet/heavy-metal interface may shrink due to the spin-flip at the interface, resulting in the spin-memory loss. Here, we propose a mechanism of the spin-memory loss. In contrast to other mechanisms based on interfacial spin-orbit coupling, our mechanism is based on the bulk spin-orbit coupling in a heavy metal. We demonstrate that the bulk spin-orbit coupling induces the entanglement between the spin and orbital degrees of freedom and this spin-orbital entanglement can give rise to sizable spin-flip at the interface even when the interfacial spin-orbit coupling is weak. Our mechanism emphasizes crucial roles of the atomic orbital degree of freedom and induces the strong spin-memory loss near band crossing points between bands of different orbital characters.
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