4.6 Article

Ultra-sensitive charge detection and latch memory using MoS2-nanoresonator-based bifurcation amplifiers

Journal

APPLIED PHYSICS LETTERS
Volume 118, Issue 5, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/5.0031890

Keywords

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Funding

  1. Science and Engineering Research Board, DST India [EMR/2016/006479]
  2. DST Nanomission, India [SR/NM/NS-1157/2015(G)]
  3. MHRD
  4. MeitY
  5. DST Nano Mission

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Utilizing the Duffing nonlinearity in a parametrically excited MoS2 nano-electromechanical system, a bifurcation amplifier has been implemented to achieve highly sensitive detection and recording of weak charge fluctuations, demonstrating the feasibility of detecting ultra-low charge perturbations at room temperature and the potential for tunable operation in the radio frequency regime, offering new possibilities in quantum sensing.
Bifurcation amplifiers are known for their extremely high sensitivity to weak input signals. We implement a bifurcation amplifier by harnessing the Duffing nonlinearity in a parametrically excited MoS2 nano-electromechanical system. We utilize the ultra-sensitive switching response between the two states of the bifurcation amplifier to detect as well as register charge-fluctuation events. We demonstrate open-loop real-time detection of ultra-low electrical charge perturbations of magnitude<10 e at room temperature. Furthermore, we show latching of the resonator onto one of the two states in response to short-lived charge fluctuations. These charge detectors offer advantages of room-temperature operation and tunable operation in the radio frequency regime, which could open several possibilities in quantum sensing.

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