Enhancement-mode atomic-layer thin In2O3 transistors with maximum current exceeding 2 A/mm at drain voltage of 0.7 V enabled by oxygen plasma treatment

In this Letter, enhancement-mode operation in devices with 1.5nm atomic-layer thin In2O3 channels over a wide range of channel lengths down to 40nm is demonstrated using an O-2 plasma treatment at room temperature. Drain currents (I-D) in excess of 2A/mm at a drain-to-source bias (V-DS) of 0.7V are achieved in enhancement mode with significantly improved subthreshold swing down to near-ideal 65mV/dec, suggesting that O-2 plasma treatment is very effective at reducing bulk and interface defects. By using low-temperature O-2 plasma, the fabrication process remains back-end-of-line compatible while enabling a clear route toward high-performance In2O3 transistors and circuitry.

Automated summary

This study demonstrates enhancement-mode operation in devices with 1.5nm atomic-layer thin In2O3 channels achieved through O-2 plasma treatment, resulting in superior performance and subthreshold swing. The findings pave the way for high-performance In2O3 transistors and circuitry.