4.6 Article

Free-standing and flexible graphene supercapacitors of high areal capacitance fabricated by laser holography reduction of graphene oxide

Journal

APPLIED PHYSICS LETTERS
Volume 118, Issue 7, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/5.0038508

Keywords

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Funding

  1. National Key Research and Development Program of China [2017YFB1104300]
  2. National Natural Science Foundation of China [61935008, 61775078, 61590930, 61905087]
  3. China Postdoctoral Science Foundation [2020M670850, 2020T130237]
  4. Fundamental Research Funds for the Central Universities [2020-JCXK-18]

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In this study, a hierarchically structured PRGO-based planar supercapacitor was reported by combining two-beam-laser-interference with the masking technique. The planar supercapacitor showed improved surface area, electric double-layer capacitors formation, and rapid ion diffusion paths due to the hierarchical structures. The hierarchically structured PRGO-based planar supercapacitor achieved an areal capacitance of 3.97 mFcm(-2) at 10mVs(-1), offering a new route for manufacturing high-performance integrated energy storage devices.
Photoreduction of graphene oxide (GO) holds great potential for developing graphene-based electrodes for high-performance supercapacitors (SCs). However, the insufficient micro-nanostructure on photoreduced GO (PRGO) restricts its electrochemical performance. Here, a hierarchically structured PRGO-based planar SC is reported by combining two-beam-laser-interference with the masking technique. The hierarchical structures improve the surface area between PRGO and electrolyte and contribute to format electric double-layer capacitors. Planar device structures with PRGO-based interdigital finger current collectors are beneficial for rapid ion diffusion paths. As a result, the hierarchically structured PRGO-based planar SC achieves an areal capacitance of 3.97 mFcm(-2) at 10mVs(-1). The proposed strategy of employing hierarchically structured PRGO in the planar SC design offers a new route for manufacturing high-performance integrated energy storage devices.

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