Design of Si0.45Ge0.55-based core-shell-type dual-material dual-gate nanotube TFET with source pocket technique

In this paper, dual- material dual-gate nanotube TFET (DMDG-NTTFET) is proposed. Dual gates in this regard are of the core-shell type, and dual-gate materials -(GM1 and -GM2) are used as control gate having work functions of tunnel and theta Auxiliary, respectively. The device is further explored with source pocket and various underlap gate lengths. When device characteristics are compared with the conventional NWTFET, significant improvements in -ION, -IOFF, -ION/IOFF, transconductance -(gm), recombination rate, and transconductance factor -(gm/Id) are observed. The proposed structure also results in improved linearity and tunnelling in the device. The effects of the device variables, such as tunnel, theta Auxiliary, source pocket length -( L1), gate underlap length -(L2), and molar concentration in -Si1- xGex (x), on various analog performance indicators, such as transconductance factor -(gm/Id), transconductance -(gm), unity gain cut-off frequency -(fT), intrinsic device delay ( tau), transconductance frequency product (g m /I d * f T), and gain-bandwidth product (GBWP), have been investigated. The -ION and -ION/IOFF in source pocket dual-material dual-gate nanotube TFET (SPDMDG NTTFET) is improved by a factor of 21.11 and 846.12, respectively. The subthreshold slope achieved using the proposed structure is 18.28 mV/decade.

Automated summary

In this paper, a dual-material dual-gate nanotube TFET (DMDG-NTTFET) is proposed, which shows significant improvements compared to conventional NWTFET in various performance indicators. The device structure also enhances linearity and tunneling effects. The subthreshold slope achieved using the proposed structure is 18.28 mV/decade.