Intimately Contacted Ni2P on CdS Nanorods for Highly E ffi cient Photocatalytic H-2 Evolution: New Phosphidation Route and the Interfacial Separation Mechanism of Charge Carriers

A new phosphidation route based on a solvothermal method is demonstrated for the deposition of Ni2P on CdS nanorods photocatalyst with NaBH4 as a crucial reactant and (H2PO2)as dissolvable P precursor, which leads to a highly crystallized and well contacted Ni2P on CdS in an Ohmic-contact model. On the optimized sample (2% Ni2P/CdS), as high as 1.18 mmol.h(-1) H-2 evolution rate can be obtained over 50 mg sample, corresponding to an apparent quantum efficiency of 56% (under lambda = 435 nm irradiation). The activity is significantly higher than the samples prepared by conventional phosphidation processes and the classical Pt (2%) modified CdS. The remarkable HER performance can be ascribed to the loading of intimately contacted Ni2P, which can promote the separation of photoinduced charge carriers and simultaneously decreases the overpotential for H-2 evolution. Furthermore, a reservoir role for photoinduced ewas observed on the deposited Ni2P beyond as a cocatalyst.

Automated summary

A new phosphidation route based on a solvothermal method is shown to deposit highly crystallized and well contacted Ni2P on CdS nanorods, leading to significantly higher H-2 evolution rate and apparent quantum efficiency.