Fabrication and Shear Strength Analysis of Sn-3.5Ag/Cu-Filled TSV for 3D Microelectronic Packaging

In this study, lead free Sn-3.5Ag solder bumps have been deposited on Cu-filled through-silicon via (TSV) by electroplating method. The solder bumps are plated using an acidic solution composed of SnSO4, H2SO4, Ag2SO4, thiourea and an additive. The current density is varied from -30 to -60 mA/cm(2) to obtain the eutectic Sn-3.5Ag solder. The copper is electroplated in TSV using an acidic solution of CuSO4 center dot 5H(2)O, H2SO4, HCl, and an inhibitor. The bottom-up Cu-filling in TSV is achieved by a 3-step pulse periodic reverse (PPR) electroplating. It has been observed that the eutectic Sn-3.5Ag solder is achieved at a current density of -55 mA/cm(2). The solder bumps are further reflowed onto TSV at 260 degrees C for 20 seconds, and shear strength of the formed Sn-3.5Ag/Cu-filled TSV joint is investigated. The results indicate the formation of Cu6Sn5 and Ag3Sn intermetallic compounds (IMCs) at the joint interface. It is found that with an increase of shear speed from 0.5-10 mm/s, the shear stress initially increases to a maximum, and then decreases beyond shear speed of 10 mm/s through 500 mm/s. It is shown that the ductile fracture mode gradually decreases beyond shear speed of 10 mm/s and disappears completely at 500 mm/s.