4.8 Article

Magnetic-Field-Stimulated Efficient Photocatalytic N2 Fixation over Defective BaTiO3 Perovskites

Journal

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
Volume 60, Issue 21, Pages 11910-11918

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/anie.202100726

Keywords

BaTiO3; defect engineering; N-2 fixation; photocatalysis

Funding

  1. National Natural Science Foundation of China [21978110, 51772126, 21801092]
  2. Program for the Development of Science and Technology of Jilin province [20190101009JH, 20190103100JH, 20190201309JC, 20200801040GH, 20200201187JC]
  3. Project of Development and Reform Commission of Jilin Province [2019C042-1, 2020C026-3]
  4. Graduate Innovation Project of Jilin Normal University [201941]
  5. Natural Sciences and Engineering Research Council of Canada (NSERC)
  6. Waterloo Institute for Nanotechnology
  7. University of Waterloo

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Efficient photocatalytic nitrogen fixation with high NH3 yield rate was achieved under an applied magnetic field using defective BaTiO3 perovskite. Manipulation of surface spin states and oxygen vacancies stimulated an electromagnetic synergistic effect between internal and external fields, suppressing carrier recombination and promoting N-2 adsorption and activation.
Efficient coupling solar energy conversion and N-2 fixation by photocatalysis has been shown promising potentials. However, the unsatisfied yield rate of NH3 curbs its forward application. Defective typical perovskite, BaTiO3, shows remarkable activity under an applied magnetic field for photocatalytic N-2 fixation with an NH3 yield rate exceeding 1.93 mg L-1 h(-1). Through steered surface spin states and oxygen vacancies, the electromagnetic synergistic effect between the internal electric field and an external magnetic field is stimulated. X-ray absorption spectroscopy and density functional theory calculations reveal the regulation of electronic and magnetic properties through manipulation of oxygen vacancies and inducement of Lorentz force and spin selectivity effect. The electromagnetic effect suppresses the recombination of photoexcited carriers in semiconducting nanomaterials, which acts synergistically to promote N-2 adsorption and activation while facilitating fast charge separation under UV-vis irradiation.

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