4.4 Article

Fabrication and Characterization of Porous Silicon Nanowires

Journal

ELECTRONIC MATERIALS LETTERS
Volume 12, Issue 1, Pages 17-23

Publisher

KOREAN INST METALS MATERIALS
DOI: 10.1007/s13391-015-5409-y

Keywords

porous silicon nanowire; silicon nanowire; porous silicon; etch rate

Funding

  1. Agency for Defense Development
  2. National Research Foundation of Korea (NRF) - Ministry of Education [NRF: 2013R1A1A2063740, 2014R1A1A2053557]
  3. National Research Foundation of Korea [2014R1A1A2053557] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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We report the synthesis of porous silicon nanowires through the metal-assisted chemical etching of porous silicon in a solution of hydrofluoric acid and hydrogen peroxide. The morphology of porous silicon nanowires was characterized by scanning electron microscopy and transmission electron microscopy. The etch rate of the porous silicon nanowires was faster than that of silicon nanowires, but slower than that of porous silicon. The porous silicon nanowires distributed uniformly on the entire porous silicon layer and the tips of the porous silicon nanowires congregated together. The single crystalline and sponge-like porous structure with the pore diameters of less than 5 rim was confirmed for the porous silicon nanowires.

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