Journal
ADVANCED MATERIALS
Volume 33, Issue 15, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202008080
Keywords
2D materials; dual‐ gate photodetectors; high detectivity; linear photoresponse; noise power density
Categories
Funding
- National Natural Science Foundation of China (NSFC) [61905198, 61575094]
- Natural Science Basic Research Program of Shaanxi Province [2019JQ-059]
- National Postdoctoral Program for Innovative Talents [BX20190283]
- Department of Science & Technology of Shaanxi Province [2020GXLH-Z-020, 2020GXLH-Z-027, 2020GXLH-Z-029]
- Northwestern Polytechnical University [2020GXLH-Z-020, 2020GXLH-Z-027, 2020GXLH-Z-029]
- Fundamental Research Funds for the Central Universities
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The dual-gate phototransistor concept allows for dual-channel conduction with ambipolar multilayer WSe2, offering a linear photoresponse with high responsivity. Additionally, the device maintains low 1/f noise under the opposite dual-gating configuration, resulting in a high detectivity for light detection.
Layered 2D semiconductors have been widely exploited in photodetectors due to their excellent electronic and optoelectronic properties. To improve their performance, photogating, photoconductive, photovoltaic, photothermoelectric, and other effects have been used in phototransistors and photodiodes made with 2D semiconductors or hybrid structures. However, it is difficult to achieve the desired high responsivity and linear photoresponse simultaneously in a monopolar conduction channel or a p-n junction. Here, dual-channel conduction with ambipolar multilayer WSe2 is presented by employing the device concept of dual-gate phototransistor, where p-type and n-type channels are produced in the same semiconductor using opposite dual-gating. It is possible to tune the photoconductive gain using a vertical electric field, so that the gain is constant with respect to the light intensity-a linear photoresponse, with a high responsivity of approximate to 2.5 x 10(4) A W-1. Additionally, the 1/f noise of the device is kept at a low level under the opposite dual-gating due to the reduction of current and carrier fluctuation, resulting in a high detectivity of approximate to 2 x 10(13) Jones in the linear photoresponse regime. The linear photoresponse and high performance of the dual-gate WSe2 phototransistor offer the possibility of achieving high-resolution and quantitative light detection with layered 2D semiconductors.
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