4.8 Article

Analysis of External and Internal Disorder to Understand Band-Like Transport in n-Type Organic Semiconductors

Journal

ADVANCED MATERIALS
Volume 33, Issue 13, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202007870

Keywords

charge transport; disorder; field‐ effect transistors; organic semiconductors; phonons

Funding

  1. Natural Sciences and Engineering Research Council of Canada (NSERC)
  2. Fonds de Recherche du Quebec - Nature et Technologies (FRQNT)
  3. EC through the ERC project through the ERC project SUPRAFUNCTION [GA-257305]
  4. Marie Curie ITN project BORGES [813863]
  5. Marie Curie ITN project UHMob [GA-811284]
  6. Labex project CSC within the Investissement d'Avenir program [ANR-10-LABX-0026 CSC, ANR-10-IDEX-0002-02]
  7. Labex project NIE [ANR-10-IDEX-0002-02, ANR-11-LABX-0058 NIE]
  8. International Center for Frontier Research in Chemistry (icFRC)
  9. Engineering and Physical Sciences Research Council (EPSRC) [EP/P00928X/1]
  10. European Commission/Region Wallonne (FEDER - BIORGEL project)
  11. Consortium des Equipements de Calcul Intensif (CECI) - Fonds National de la Recherche Scientifique (F.R.S.-FNRS) [2.5020.11]
  12. Tier-1 supercomputer of the Federation Wallonie-Bruxelles
  13. Walloon Region [1117545]
  14. FRS-FNRS
  15. European Union Horizon 2020 research and innovation program [646176]
  16. EPSRC [EP/P00928X/1] Funding Source: UKRI
  17. Marie Curie Actions (MSCA) [813863] Funding Source: Marie Curie Actions (MSCA)

Ask authors/readers for more resources

Charge transport in organic semiconductors is highly sensitive to disorder, especially in n-type materials, due to internal dynamic disorder caused by thermal fluctuations and molecular vibrations. This disorder can lead to transient localization of charge carriers.
Charge transport in organic semiconductors is notoriously extremely sensitive to the presence of disorder, both internal and external (i.e., related to interactions with the dielectric layer), especially for n-type materials. Internal dynamic disorder stems from large thermal fluctuations both in intermolecular transfer integrals and (molecular) site energies in weakly interacting van der Waals solids and sources transient localization of the charge carriers. The molecular vibrations that drive transient localization typically operate at low-frequency (

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