Journal
ADVANCED MATERIALS
Volume 33, Issue 14, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202006302
Keywords
high efficiency; high stability; low temperature; perovskite light‐ emitting diodes
Categories
Funding
- Major Research Plan of the National Natural Science Foundation of China [91733302]
- National Natural Science Foundation of China [61725502, 61935017, 51972171, 62022040, 11704185, 11804156, 61961160733]
- Major Program of Natural Science Research of Jiangsu Higher Education Institutions of China [19KJA520006]
- Natural Science Foundation of Jiangsu Province, China [BK20171021]
- Synergetic Innovation Center for Organic Electronics and Information Displays
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Room-temperature-high-efficiency light-emitting diodes based on metal halide perovskite FAPbI(3) exhibit excellent performance at low temperatures, with increased quantum efficiency and stability. The enhanced EQE at low temperatures is attributed to the increased photoluminescence quantum efficiencies of the perovskite, leading to an increased radiative recombination rate.
Room-temperature-high-efficiency light-emitting diodes based on metal halide perovskite FAPbI(3) are shown to be able to work perfectly at low temperatures. A peak external quantum efficiency (EQE) of 32.8%, corresponding to an internal quantum efficiency of 100%, is achieved at 45 K. Importantly, the devices show almost no degradation after working at a constant current density of 200 mA m(-2) for 330 h. The enhanced EQEs at low temperatures result from the increased photoluminescence quantum efficiencies of the perovskite, which is caused by the increased radiative recombination rate. Spectroscopic and calculation results suggest that the phase transitions of the FAPbI(3) play an important role for the enhancement of exciton binding energy, which increases the recombination rate.
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