A two-dimensional electron gas based on a 5s oxide with high room-temperature mobility and strain sensitivity

The coupling of optical and electronic degrees of freedom together with quantum confinement in low-dimensional electron systems is particularly interesting for achieving exotic functionalities in strongly correlated oxide electronics. Recently, high room-temperature mobility has been achieved for a large bandgap transparent oxide - BaSnO3 upon extrinsic La or Sb doping, which has excited significant re-search attention. In this work, we report the realization of a two-dimensional electron gas (2DEG) on the surface of transparent BaSnO3 via oxygen vacancy creation, which exhibits a high carrier density of similar to 7.72 x 10(14) cm(-2) and a high room-temperature mobility of similar to 18 cm(2)center dot V-1 center dot s(-1). Such a 2DEG is rather sensitive to strain and a less than 0.1% in-plane biaxial compressive strain leads to a giant resistance enhancement of similar to 350% (more than 540 k Omega/square) at room temperature. Thus, this work creates a new path to exploring the physics of low-dimensional oxide electronics and devices applicable at room temperature. (c) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Automated summary

The realization of a two-dimensional electron gas on the surface of transparent BaSnO3 via oxygen vacancy creation results in high carrier density and room-temperature mobility. This 2DEG is highly sensitive to strain, exhibiting a significant resistance enhancement under a small in-plane biaxial compressive strain.