Journal
ACTA MATERIALIA
Volume 204, Issue -, Pages -Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.actamat.2020.116516
Keywords
Two-dimensional electron gas; 5s oxide; BaSnO3; Piezoelectric strain modulation; Memory devices
Funding
- National Natural Science Foundation of China (NSFC) [11704018, 51822101, 51861135104, 51771009]
- National Natural Science Foundation of China [11825403]
- Special Funds for Major State Basic Research [2015CB921700]
- Qing Nian Ba Jian Program
- Future Fellowship (Australia Research Council) [FT160100205]
- Australian Research Council [FT160100207]
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The realization of a two-dimensional electron gas on the surface of transparent BaSnO3 via oxygen vacancy creation results in high carrier density and room-temperature mobility. This 2DEG is highly sensitive to strain, exhibiting a significant resistance enhancement under a small in-plane biaxial compressive strain.
The coupling of optical and electronic degrees of freedom together with quantum confinement in low-dimensional electron systems is particularly interesting for achieving exotic functionalities in strongly correlated oxide electronics. Recently, high room-temperature mobility has been achieved for a large bandgap transparent oxide - BaSnO3 upon extrinsic La or Sb doping, which has excited significant re-search attention. In this work, we report the realization of a two-dimensional electron gas (2DEG) on the surface of transparent BaSnO3 via oxygen vacancy creation, which exhibits a high carrier density of similar to 7.72 x 10(14) cm(-2) and a high room-temperature mobility of similar to 18 cm(2)center dot V-1 center dot s(-1). Such a 2DEG is rather sensitive to strain and a less than 0.1% in-plane biaxial compressive strain leads to a giant resistance enhancement of similar to 350% (more than 540 k Omega/square) at room temperature. Thus, this work creates a new path to exploring the physics of low-dimensional oxide electronics and devices applicable at room temperature. (c) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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