Atomic-Scale Electrical Field Mapping of Hexagonal Boron Nitride Defects

The distribution of electric fields in hexagonal boron nitride is mapped down to the atomic level inside a scanning transmission electron microscope by using the recently introduced technique of differential phase contrast imaging. The maps are calculated and displayed in real time, along with conventional annular dark-field images, through the use of custom-developed hardware and software. An increased electric field is observed around boron monovacancies and subsequently mapped and measured relative to the perfect lattice. The edges of extended defects feature enhanced electric fields, which can be used to trap diffusing adatoms. The magnitude of the electric field produced by the different types of edges is compared to monolayer areas, confirming previous predictions regarding their stability. These observations provide insight into the properties of this interesting material, serving as a suitable platform on which to test the limits of this technique, and encourage further work, such as dynamic experiments coupled with in situ techniques.

Automated summary

In this study, the distribution of electric fields in hexagonal boron nitride was mapped down to the atomic level using differential phase contrast imaging inside a scanning transmission electron microscope. Enhanced electric fields were observed around boron monovacancies and extended defects, providing insights into the properties of this material and confirming previous predictions regarding their stability. This research encourages further experiments and dynamic studies coupled with in situ techniques to explore the limits of the imaging technique.