Fabrication of 1D Te/2D ReS2 Mixed-Dimensional van der Waals p-n Heterojunction for High-Performance Phototransistor

The superior optical and electronic properties of the two-dimensional (2D) rhenium disulfide (ReS2) makes it suitable for nanoelectronic and optoelectronic applications. However, the internal defects coupled with with the low mobility and light-absorbing capability of ReS2 impede its utilization in high-performance photodetectors. Fabrication of mixed-dimensional heterojunctions is an alternative method for designing high-performance hybrid photodetectors. This study proposes a mixed-dimensional van der Waals (vdW) heterojunction photodetector, containing high-performance one-dimensional (1D) p-type tellurium (Te) and 2D n-type ReS2, developed by depositing Te nanowires on ReS2 nanoflake using the dry transfer method. It can improve the injection and separation efficiency of photoexcited electron-hole pairs due to the type II p-n heterojunction formed at the ReS2 and Te interface. The proposed heterojunction device is sensitive to visible-light sensitivity (632 nm) with an ultrafast photoresponse (5 ms), high responsivity (180 A/W), and specific detectivity (10(9)), which is superior to the pristine Te and ReS2 photodetectors. As compared to the ReS2 device, the responsivity and response speed is better by an order of magnitude. These results demonstrate the fabrication and application potential of Te/ReS2 mixed-dimensional heterojunction for high-performance optoelectronic devices and sensors.

Automated summary

By employing mixed-dimensional heterojunction technology, a high-performance Te/ReS2 photodetector has been successfully fabricated, demonstrating superior sensitivity, fast response speed, and high responsivity and detectivity compared to pristine Te and ReS2 photodetectors.