Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 13, Issue 9, Pages 11089-11095Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.1c01734
Keywords
hafnium oxide; III-V; ferroelectric FET; ferroelectric tunnel junction; thin films; CMOS integration
Funding
- Swedish Research Council (VR) [2016-6186, 2017-4108, 2018-05379]
- NanoLund Centre for Nanoscience at Lund University
- Swedish Research Council [2018-05379] Funding Source: Swedish Research Council
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This study investigates the impact of the sputtering process conditions of the TiN top electrode on the ferroelectric properties of Hf1-xZrxO2, revealing that (111) textured TiN is superior to (002) texturing for achieving high remanent polarization (P-r). Additionally, supplying extra nitrogen during TiN deposition leads to significantly longer endurance, potentially by limiting oxygen scavenging from the Hf1-xZrxO2 film. These findings highlight the importance of tuning the top electrode of the ferroelectric stack for successful device implementation.
Ferroelectric memories based on hafnium oxide are an attractive alternative to conventional memory technologies due to their scalability and energy efficiency. However, there are still many open questions regarding the optimal material stack and processing conditions for reliable device performance. Here, we report on the impact of the sputtering process conditions of the commonly used TiN top electrode on the ferroelectric properties of Hf1-xZrxO2. By manipulating the deposition pressure and chemistry, we control the preferential orientation of the TiN grains between (111) and (002). We observe that (111) textured TiN is superior to (002) texturing for achieving high remanent polarization (P-r). Furthermore, we find that additional nitrogen supply during TiN deposition leads to >5x greater endurance, possibly by limiting the scavenging of oxygen from the Hf1-xZrxO2 film. These results help explain the large P-r variation reported in the literature for Hf1-xZrxO2/TiN and highlights the necessity of tuning the top electrode of the ferroelectric stack for successful device implementation.
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