Utilizing the Diffusion of Fluorinated Polymers to Modify the Semiconductor/Dielectric Interface in Solution-Processed Conjugated Polymer Field-Effect Transistors

It has been demonstrated that tailoring the properties of semiconductor/dielectric interfaces with fluorinated polymers yields better performance for organic field-effect transistors (OFETs). However, it remains a challenge to fabricate bottom-gate OFET devices on fluorinated dielectrics using solution-processed methods due to the poor wettability of fluorinated dielectrics. Here, we utilized the diffusion of fluorinated poly(methyl methacrylate) (PMMA) to construct the fluorine-rich semiconductor/dielectric interface to achieve the fabrication of bottom-gate OFETs with a solution-processed poly(3-hexylthiophene) (P3HT) semiconductor layer. The consequences indicate that the fluorinated dielectrics can effectively decrease the charge traps density at the semiconductor/dielectric interface and promote the edge-on orientation of P3HT on the dielectric surface. Thus, the devices based on fluorinated PMMA modified dielectrics exhibit higher carrier mobility and electrical stability than those of the fluorine-free devices. Our investigation affords a new strategy for the design and interface optimization of devices, which may further advance the performance of OFET devices.

Automated summary

It has been shown that tailoring the properties of semiconductor/dielectric interfaces with fluorinated polymers can improve the performance of OFETs. This study utilized the diffusion of fluorinated PMMA to construct a fluorine-rich semiconductor/dielectric interface, successfully fabricating bottom-gate OFETs with a solution-processed P3HT semiconductor layer.