4.7 Article

Stabilization of NiFe Layered Double Hydroxides on n-Si by an Activated TiO2 Interlayer for Efficient Solar Water Oxidation

Journal

ACS APPLIED ENERGY MATERIALS
Volume 3, Issue 12, Pages 12298-12307

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsaem.0c02355

Keywords

photoelectrochemical water splitting; silicon; NiFe layered double hydroxide; titanium dioxide; photoanode

Funding

  1. Basic Science Research Program [2017R1A2B3009135]
  2. Future Material Discovery Program [2018M3D1A1058793]
  3. Korea Hydro & Nuclear Power Co., Ltd. [2018-Tech-21]
  4. National Research Foundation of Korea (NRF) grant - Korea government MSIT and ICT [2019M3E6A1103818, 2020M2D8A206983011]
  5. National Research Foundation of Korea [2019M3E6A1103818] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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NiFe layered double hydroxides (LDH) on n-Si can be an expectable photoanode because of its advantages of earth-abundant materials, high photoelectrochemical properties, and wide solar spectrum. However, the open-channeled structure of LDH cannot effectively passivate silicon from corrosion and weak van der Waals force between the catalyst and substrate could lead to delamination. Herein, we demonstrated a cyclic voltammetry (CV)-activated amorphous TiO2 (a-TiO2) interlayer for the stabilization of NiFe LDH on n-Si. Stability of the photoanode could be enhanced through the insertion of the activated a-TiO2 layer, leading similar to 140 h stability in the K-borate electrolyte, which is the longest stability reported so far using the NiFe- or TiO2-based Si photoanode. Additionally, CV activation led a-TiO2 into the conductive state through Ti3+ and oxygen vacancies, resulting in the facilitation of hole transfer. Synergetic heterolayers on the n-Si photoanode exhibited 0.92 +/- 0.1 V versus reversible hydrogen electrode (RHE) onset potential, similar to 36 mA/cm(2) photocurrent density at 1.23 V versus RHE, and similar to 100% charge injection efficiency at 1.3 V versus RHE. A high external quantum efficiency of similar to 90% was achieved at 800 nm, and the optimized photoanode generated a photovoltage as high as 610 mV. Such a photovoltage could be attributed to the photoanode without the buried junction (adaptive junction) which consists of amorphous and thin NiFe LDH and a-TiO2 layers on n-Si. These results state that our strategy of introducing the CV-activated a-TiO2 layer for the stabilization and boosting the effect of NiFe LDH catalysts on n-Si and forming adaptive junction for yielding high photovoltage can be a prominent solution for effective solar water oxidation.

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