4.7 Article

High-Efficiency Tin Halide Perovskite Solar Cells: The Chemistry of Tin (II) Compounds and Their Interaction with Lewis Base Additives during Perovskite Film Formation

Journal

SOLAR RRL
Volume 5, Issue 1, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/solr.202000606

Keywords

divalent Sn compounds; Lewis base additives; perovskite solar cells; tin-perovskite solar cells; toxicity

Funding

  1. JSPS KAKENHI [18H02079]
  2. Egyptian Ministry of Higher Education & Scientific Research
  3. [RG-1438-041]

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Lead-based perovskite solar cells have shown high power conversion efficiency, but their commercial potential is hindered by the toxic lead content. Tin-based perovskite solar cells are predicted to have comparable performance, but further research is needed to improve their efficiency beyond the current levels.
Lead (Pb)-based perovskite solar cells (Pb-PSCs) have been recorded with a fascinating power conversion efficiency (PCE) of 25.5%. However, the presence of toxic Pb in the perovskite absorber material hinders the commercial aspects of Pb-PSCs as a promising and efficient new generation of solar cells. Fortunately, theoretical calculations have predicted that tin (Sn)-based perovskite solar cells (Sn-PSCs) could have superior performance comparable to the Pb-PSCs. Recently, many approaches have been reported for developing efficient Sn-PSCs but yet they have shown the best PCE of 13.24%. This low PCE compared to Pb-PSCs might be because Sn-PSCs have been approached in the same way as Pb-PSCs. However, from a chemistry viewpoint, the understanding of Sn-PSCs might be very different from that of Pb-based ones. Herein, the fundamental knowledge of the chemistry and coordination chemistry of Sn-II compounds and their structural properties is described. Then, an insight is provided into understanding the recent trends of Sn perovskite formation using various Lewis base additives in the precursor solution and incorporation as a cation in the perovskite lattice. Finally, the influence of utilizing Lewis base additives on the device dynamics is discussed.

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