Journal
MATERIALS TODAY PHYSICS
Volume 17, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.mtphys.2021.100347
Keywords
Excess Cu doping; Bi2Te2.7Se0.3; STEM-EDX spectrum Imaging; Atomic scale mapping; Transport properties
Funding
- Institute for Basic Science (South Korea) [IBS-R011-D1]
- Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) [2015M3D1A1070672]
- NFR - Korean government in South Korea [2020R1A2C1006207]
- Samsung Research Funding & Incubation Center of Samsung Electronics, South Korea [SRFCMA1701-05]
- National Research Foundation of Korea [2020R1A2C1006207, 2015M3D1A1070672] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Using advanced X-ray spectroscopy, excess Cu doping behavior in ternary Bi2Te2.7Se0.3 bulk alloy is visualized with unprecedented detectability. The study sheds light on the influence of Cu dopants on the properties of materials, potentially impacting the understanding of quantum phenomena in doped nanomaterials and doped topological insulators.
Elemental doping is a universal strategy in controlling the functionalities of materials that strongly correlate with naturally formed atomic defects. Element-resolved chemical mapping for atomic defects has answered numerous problems on the relations between defective structures and properties. However, tracking small amounts of dopants in multicomponent bulks and clarifying their doping behaviors remain challenging. Using advanced X-ray spectroscopy, the excess Cu doping behavior in ternary Bi2Te2.7Se0.3 bulk alloy is visualized with the unprecedented detectability from sub-one atomic percent of concentration. The low content of 0.2 at.% Cu preferentially occupies the Bi site, while Cu atoms are found in three crystallographic sites of Bi2Te3 structure and van der Waals gap at high Cu content of 1.2 at.%. These behaviors explain the nontrivial role of Cu dopants on carrier generation processes and relevant thermoelectric properties of Bi2Te2.7Se0.3. The atomic-level identification should also stimulate the elucidation of diverse properties in doped nanomaterials and quantum phenomena in doped topological insulators. (C) 2021 Elsevier Ltd. All rights reserved.
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