Journal
ACS OMEGA
Volume 5, Issue 50, Pages 32800-32805Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsomega.0c05364
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Funding
- Program for Chang Jiang Scholars and Innovative Research Teams in Universities [IRT_17R40]
- Science and Technology Program of Guangzhou [2019050001]
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology [2017B030301007]
- MOE International Laboratory for Optical Information Technologies
- 111 Project
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We systematically study the sensitivity and noise of an InN/InGaN quantum dot (QD) extended gate field-effect transistor (EGFET) with super-Nernstian sensitivity and directly compare the performance with potentiometric sensing. The QD sensor exhibits a sensitivity of -80 mV/decade with excellent linearity over a wide concentration range, assessed for chloride anion detection in 10(-4) to 0.1 M KCl aqueous solutions. The sensitivity and linearity are reproduced for the EGFET and direct open-circuit potential (OCP) readout. The EGFET noise in the saturated regime is smaller than the OCP noise, while the EGFET noise in the linear regime is largest. This highlights EGFET operation in the saturated regime for most precise measurements and the lowest limit of detection and the lowest limit of quantification, which is attributed to the low-impedance current measurement at a relatively high bias and the large OCP for the InN/InGaN QDs.
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