Journal
ELECTRONICS
Volume 9, Issue 12, Pages -Publisher
MDPI
DOI: 10.3390/electronics9122098
Keywords
RRAM devices; 2D MXene; resistance switching; volatile; nonvolatile; synaptic plasticity
Categories
Funding
- National Natural Science Foundation of China [61804079, 21671167]
- Science Foundation of Jiangsu Province [CZ1060619001, SZDG2018007]
- Science Foundation of National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology [KFJJ20200102]
- Science Research Funds for Nanjing University of Posts and Telecommunications [NY218110, BK20191202]
Ask authors/readers for more resources
Utilizing electronic devices to emulate biological synapses for the construction of artificial neural networks has provided a feasible research approach for the future development of artificial intelligence systems. Until now, different kinds of electronic devices have been proposed in the realization of biological synapse functions. However, the device stability and the power consumption are major challenges for future industrialization applications. Herein, an electronic synapse of MXene/SiO2 structure-based resistive random-access memory (RRAM) devices has been designed and fabricated by taking advantage of the desirable properties of SiO2 and 2D MXene material. The proposed RRAM devices, Ag/MXene/SiO2/Pt, exhibit the resistance switching characteristics where both the volatile and nonvolatile behaviors coexist in a single device. These intriguing features of the Ag/MXene/SiO2/Pt devices make them more applicable for emulating biological synaptic plasticity. Additionally, the conductive mechanisms of the Ag/MXene/SiO2/Pt RRAM devices have been discussed on the basis of our experimental results.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available