Journal
ACS ENERGY LETTERS
Volume 6, Issue 1, Pages 9-15Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsenergylett.0c02230
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Funding
- APRC Grant of the City University of Hong Kong [9380086, 9610421]
- Innovation and Technology Fund [ITS/497/18FP, GHP/021/18SZ]
- Office of Naval Research [N00014-20-1-2191]
- Air Force Office of Scientific Research [FA9550-18-1-0046]
- ECS grant from the Research Grants Council of Hong Kong [CityU 21301319]
- Natural Science Foundation of Guangdong Province [2019A1515010761]
- Guangdong Major Project of Basic and Applied Basic Research [2019B030302007]
- National Research Foundation (NRF) of Korea [NRF-2016M1A2A2940911, 2019R1A6A1A11044070]
- Guangdong-Hong Kong-Macao joint laboratory of optoelectronic and magnetic functional materials [2019B121205002]
- National Research Foundation of Korea [2019R1A6A1A11044070, 2016M1A2A2940911, 4120200213669] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Novel NFAs were designed with enhanced absorption edge and high J(sc), leading to efficient organic solar cells with improved power conversion efficiency.
Nonfullerene acceptors (NFAs) have played an important role in the development of organic solar cells. However, the optical absorption of most NFAs is limited within 600-900 nm, prohibiting further improvement of short-circuit current density (J(sc)). To alleviate this problem, a fused-ring pi-core BzS was designed by combining weakly electron-withdrawing benzotriazole (Bz) and strongly electron-donating selenophene together. Besides, the length of N-alkyl chain on the Bz moiety was engineered to tune the morphology, affording two NFAs mBzS-4F and EHBzS-4F. Both NFAs possess an absorption edge approaching 1000 nm, as resulted from the enhanced intramolecular charge transfer in conjunction with efficient intra- and intermolecular interactions. Binary photovoltaic devices based on PM6:mBzS-4F showed a power conversion efficiency of 17.02% with a very high J(sc) of 27.72 mA/cm(2) and a low energy loss of 0.446 eV. This work provides a strategy for future design of efficient NIR-responsive materials.
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