Indium Tin Oxide Thin Film Deposition by Magnetron Sputtering at Room Temperature for the Manufacturing of Efficient Transparent Heaters

Indium tin oxide (ITO) thin films are widely used as transparent electrodes in electronic devices. Many of those electronic devices are heat sensitive, thus their manufacturing process steps should not exceed 100 degrees C. Manufacturing competitive high-quality ITO films at low temperature at industrial scale is still a challenge. Magnetron sputtering technology is the most suitable technology fulfilling those requirements. However, ITO layer properties and the reproducibility of the process are extremely sensitive to process parameters. Here, morphological, structural, electrical, and optical characterization of the ITO layers deposited at low temperature has been successfully correlated to magnetron sputtering process parameters. It has been demonstrated that the oxygen flow controls and influences layer properties. For oxygen flow between 3-4 sccm, high quality crystalline layers were obtained with excellent optoelectronic properties (resistivity 80%). The optimized conditions were applied to successfully manufacture transparent ITO heaters on large area glass and polymeric components. When a low supply voltage (8 V) was applied to transparent heaters (THs), de-icing of the surface was produced in less than 2 min, showing uniform thermal distribution. In addition, both THs (glass and polycarbonate) showed a great stability when exposed to saline solution.

Automated summary

The study successfully correlated the properties of ITO layers deposited at low temperature with magnetron sputtering process parameters, finding that oxygen flow control influences the properties of the layer. High quality crystalline layers were obtained with an oxygen flow between 3-4 sccm. The optimized conditions were successfully applied for manufacturing transparent ITO heaters.