Journal
ADVANCED SCIENCE
Volume 7, Issue 24, Pages -Publisher
WILEY
DOI: 10.1002/advs.202002172
Keywords
chemical vapor deposition; covalent bonds; heteroatom doping; metal– semiconductor heterostructures; photoelectrocatalytic performance
Categories
Funding
- National Key RAMP
- D Program of China [2018YFA0209500, 2018YFA0306900]
- National Natural Science Foundation of China [11974105, 21975067, 21705036, 21872114, U19A2090, 51525202]
- Natural Science Foundation of Hunan Province, China [2018JJ3035]
- Fundamental Research Funds for the Central Universities from Hunan University
- JSPS-KAKENHI [JP16H06333, 18K14119]
- National Basic Research Programs of China [2016YFA0300901]
- Grants-in-Aid for Scientific Research [18K14119] Funding Source: KAKEN
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Accurate design of the 2D metal-semiconductor (M-S) heterostructure via the covalent combination of appropriate metallic and semiconducting materials is urgently needed for fabricating high-performance nanodevices and enhancing catalytic performance. Hence, the lateral epitaxial growth of M-S SnxMo1-xS2/MoS2 heterostructure is precisely prepared with in situ growth of metallic SnxMo1-xS2 by doping Sn atoms at semiconductor MoS2 edge via one-step chemical vapor deposition. The atomically sharp interface of this heterostructure exhibits clearly distinguished performance based on a series of characterizations. The oxygen evolution photoelectrocatalytic performance of the epitaxial M-S heterostructure is 2.5 times higher than that of pure MoS2 in microreactor, attributed to the efficient electron-hole separation and rapid charge transfer. This growth method provides a general strategy for fabricating seamless M-S lateral heterostructures by controllable doping heteroatoms. The M-S heterostructures show increased carrier migration rate and eliminated Fermi level pinning effect, contributing to their potential in devices and catalytic system.
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