Related references
Note: Only part of the references are listed.Recommended Methods to Study Resistive Switching Devices
Mario Lanza et al.
ADVANCED ELECTRONIC MATERIALS (2019)
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices
Wei Wang et al.
NATURE COMMUNICATIONS (2019)
Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides
Ruijing Ge et al.
NANO LETTERS (2018)
Experimental Observation and Mitigation of Dielectric Screening in Hexagonal Boron Nitride Based Resistive Switching Devices
Bingru Wang et al.
CRYSTAL RESEARCH AND TECHNOLOGY (2018)
Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing
Zhongrui Wang et al.
NATURE MATERIALS (2017)
Toward reliable RRAM performance: macro- and micro-analysis of operation processes
Gennadi Bersuker et al.
JOURNAL OF COMPUTATIONAL ELECTRONICS (2017)
Graphene and Related Materials for Resistive Random Access Memories
Fei Hui et al.
ADVANCED ELECTRONIC MATERIALS (2017)
Resistive Switching in ZnO Nanorods/Graphene Oxide Hybrid Multilayer Structures
Gopinathan Anoop et al.
ADVANCED ELECTRONIC MATERIALS (2017)
Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching
Na Xiao et al.
ADVANCED FUNCTIONAL MATERIALS (2017)
Anatomy of Ag/Hafnia-Based Selectors with 1010 Nonlinearity
Rivu Midya et al.
ADVANCED MATERIALS (2017)
Neuromorphic computing using non-volatile memory
Geoffrey W. Burr et al.
ADVANCES IN PHYSICS-X (2017)
Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets
Peifu Cheng et al.
NANO LETTERS (2016)
Liquid-Exfoliated Black Phosphorous Nanosheet Thin Films for Flexible Resistive Random Access Memory Applications
Chunxue Hao et al.
ADVANCED FUNCTIONAL MATERIALS (2016)
Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown
Yanfeng Ji et al.
APPLIED PHYSICS LETTERS (2016)
A review of emerging non-volatile memory (NVM) technologies and applications
An Chen
SOLID-STATE ELECTRONICS (2016)
Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices
Michael Luebben et al.
ADVANCED MATERIALS (2015)
Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application
A. Prakash et al.
APPLIED PHYSICS LETTERS (2015)
Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array
Jeonghwan Song et al.
IEEE ELECTRON DEVICE LETTERS (2015)
Annealing free, clean graphene transfer using alternative polymer scaffolds
Joshua D. Wood et al.
NANOTECHNOLOGY (2015)
Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2
Vinod K. Sangwan et al.
NATURE NANOTECHNOLOGY (2015)
Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics
Jongmyung Yoo et al.
AIP ADVANCES (2015)
Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure
Umesh Chand et al.
JOURNAL OF APPLIED PHYSICS (2015)
Resistive switching of Cu/SiC/Au memory devices with a high ON/OFF ratio
L. Zhong et al.
SOLID-STATE ELECTRONICS (2014)
Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
Yuchao Yang et al.
NATURE COMMUNICATIONS (2014)
Bipolar resistive switching behavior with high ON/OFF ratio of Co:BaTiO3 films by acceptor doping
S. Li et al.
APPLIED PHYSICS LETTERS (2013)
High ON/OFF Ratio and Quantized Conductance in Resistive Switching of TiO2 on Silicon
Chengqing Hu et al.
IEEE ELECTRON DEVICE LETTERS (2013)
Transparent and flexible resistive switching memory devices with a very high ON/OFF ratio using gold nanoparticles embedded in a silk protein matrix
Narendar Gogurla et al.
NANOTECHNOLOGY (2013)
Observation of Nonvolatile Resistive Memory Switching Characteristics in Ag/Graphene-Oxide/Ag Devices
Gunasekaran Venugopal et al.
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY (2012)
Large-Scale Synthesis of High-Quality Hexagonal Boron Nitride Nanosheets for Large-Area Graphene Electronics
Kang Hyuck Lee et al.
NANO LETTERS (2012)
Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene
Jun Yao et al.
NATURE COMMUNICATIONS (2012)
Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance
Chun-Hu Cheng et al.
ADVANCED MATERIALS (2011)
Mechanism of nonvolatile resistive switching in graphene oxide thin films
Fei Zhuge et al.
CARBON (2011)
Nonvolatile resistive switching in single crystalline ZnO nanowires
Yuchao Yang et al.
NANOSCALE (2011)
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5-x/TaO2-x bilayer structures
Myoung-Jae Lee et al.
NATURE MATERIALS (2011)
Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications
Hu Young Jeong et al.
NANO LETTERS (2010)
Nonvolatile resistive switching in graphene oxide thin films
C. L. He et al.
APPLIED PHYSICS LETTERS (2009)
Forming process investigation of CuxO memory films
H. B. Lv et al.
IEEE ELECTRON DEVICE LETTERS (2008)
Vacancy migration in hexagonal boron nitride
A. Zobelli et al.
PHYSICAL REVIEW B (2007)
Share Paper
