4.6 Article

Synchronous growth of 30°-twisted bilayer graphene domains with millimeter scale

Journal

2D MATERIALS
Volume 8, Issue 2, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/abda0e

Keywords

twisted bilayer graphene; synchronous growth; hexagonal domains; millimeter scale; single crystal

Funding

  1. National Natural Science Foundation of China (NSFC) [61771138, 52002254, 51772287]
  2. Science and Technology Innovation Institute of Dongguan University of Technology [KCYCXPT2017004]
  3. China Postdoctoral Science Foundation [2018M643651]
  4. Science and Technology Research Program of Chongqing Municipal Education Commission [KJQN201900643]
  5. Fundamental Research Funds for the Central Universities [ZYGX2018J028, YJ201893]
  6. Sichuan Science and Technology Foundation [20YYJC3895, 2020YJ0262]
  7. Chunhui plan of Ministry of Education of China
  8. State Key Lab of Advanced Metals and Materials, China [2019-Z03]
  9. Dongguan Core Technology Frontier Project [2019622102012]

Ask authors/readers for more resources

This study successfully achieved the millimeter-sized single-crystalline 30 degrees-twist BLG with the assistance of decaborane for the first time, providing a new growth strategy for 30 degrees-twist BLG domains.
Bilayer graphene (BLG) with 30 degrees-twist (30 degrees-tBLG) has been proven to possess a quasicrystal structure potentially providing novel applications. Despite the growth of BLG, especially the AB-stacking bilayer, has gained great attention, the growth of 30 degrees-tBLG has been rarely achieved. Herein, for the first time, the decaborane-assisted synchronous growth of millimeter-sized single-crystalline 30 degrees-tBLG was achieved on Cu foil by controlling the nucleation density and growth kinetics of graphene during chemical vapor deposition using diluted methane gas as the carbon source. The synchronous growth kinetics and decaborane-assisted co-catalysis mechanism are revealed by monitoring the growth process from the initial stage of graphene seeds to the millimeter-size scale. A 30 degrees-tBLG based field effect transistor was fabricated and was found to possess a field-effect carrier mobility as high as 3671.3 cm(2) V-1 s(-1) at room temperature. Thus, this work provides a new strategy to grow high-quality and large-scale 30 degrees-tBLG domains which will facilitate their application in the quasicrystal field.

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