Journal
NANOMATERIALS
Volume 11, Issue 1, Pages -Publisher
MDPI
DOI: 10.3390/nano11010126
Keywords
GaN; InGaN; photochemical etch; molecular beam epitaxy
Categories
Funding
- UAE University [UPAR-31S443, 31S214, 31S306]
- National Key Research and Development Programof China [2018YFB2200104]
- Strategic Priority Research Program of the Chinese Academy of Sciences [XDB43010102]
- Frontier Science Key Research Program of CAS [QYZDB-SSWSLH006]
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The review summarizes recent advancements in nitride nanostructures and their applications, including synthesis, growth, and application of nitride materials. The discussion focuses on the growth of nitride materials on various substrates and the recent development of In(Ga)N nanostructure applications. The review also addresses the challenges and future directions in the field.
This review summarizes the recent research on nitride nanostructures and their applications. We cover recent advances in the synthesis and growth of porous structures and low-dimensional nitride nanostructures via metal-assisted photochemical etching and molecular beam epitaxy. The growth of nitride materials on various substrates, which improves their crystal quality, doping efficiency, and flexibility of tuning performance, is discussed in detail. Furthermore, the recent development of In(Ga)N nanostructure applications (light-emitting diodes, lasers, and gas sensors) is presented. Finally, the challenges and directions in this field are addressed.
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