Journal
NANOMATERIALS
Volume 11, Issue 1, Pages -Publisher
MDPI
DOI: 10.3390/nano11010240
Keywords
Indium doped ZnO nanowire; thermal oxidation; field emission; flat-panel X-ray source
Categories
Funding
- National Key Research and Development Program of China [2016YFA0202001]
- National Natural Science Foundation of China [91833303, 61701551]
- Fundamental Research Funds for the Central Universities
- Science and Technology Department of Guangdong Province
- Guangzhou Science Technology and Innovation Commission
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The research focuses on the application of large-area indium-doped zinc oxide nanowire arrays in flat-panel X-ray sources, aiming to enhance emission current by altering the conductivity and lattice structure. Results show that the high emission current is mainly attributed to the high crystallinity and conductivity change induced by the indium dopants.
Large-area zinc oxide (ZnO) nanowire arrays have important applications in flat-panel X-ray sources and detectors. Doping is an effective way to enhance the emission current by changing the nanowire conductivity and the lattice structure. In this paper, large-area indium-doped ZnO nanowire arrays were prepared on indium-tin-oxide-coated glass substrates by the thermal oxidation method. Doping with indium concentrations up to 1 at% was achieved by directly oxidizing the In-Zn alloy thin film. The growth process was subsequently explained using a self-catalytic vapor-liquid-solid growth mechanism. The field emission measurements show that a high emission current of similar to 20 mA could be obtained from large-area In-doped sample with a 4.8 x 4.8 cm(2) area. This high emission current was attributed to the high crystallinity and conductivity change induced by the indium dopants. Furthermore, the application of these In-doped ZnO nanowire arrays in a flat-panel X-ray source was realized and distinct X-ray imaging was demonstrated.
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